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PhD Defense of M. Jing WAN

Published on July 13, 2012
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PhD Defense July 23, 2012
Defense of a doctoral thesis WAN Jing for the University of Grenoble,
specialty Nanoelectronics and NanoTechnlologies (NEET) intitled:

Innovative sharp switching devices : from TFET to Z²-FET.

Mr WAN Jing

Mr WAN Jing

Wednesday 23rd July 2012  at 2pm

Abstract:
This thesis is dedicated to conceiving and studying sharp switching devices, including the tunneling field-effect-transistor (TFET) and a new feedback device (Z2-FET), for low power logic and memory applications.
We have investigated TFETs with various gate oxides, channel materials and structures for enhancing the drive current (ION) and reducing leakage (ILEAK).
A new class of TFET (BET-FET: bipolar enhanced tunneling FET) combining
tunneling and bipolar amplification is developed showing excellent performances, with ION > 4000 A/m and SS <60 mV/dec over 7 decades of current.
We also conceived and demonstrated a new device named the Z2-FET (zero subthreshold swing and zero impact ionization), which exhibits extremely sharp switching with SS < 1 mV/dec, ION/IOFF ~ 109, gate-controlled hysteresis and scalability down to 20 nm. The Z2-FET is used for capacitorless 1-T DRAM with supply voltage down to 1.1 V, retention time up to 5.5 s and access speed reaching 1 ns.

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Partenaires

Thesis prepared in the laboratory IMEP-LAHC supervised by  M.Sorin CRISTOLOVEANU, Alex ZASLAVSKY and  Cyrille LE ROYER.

Date of update July 15, 2013

Contact

Sorin CRISTOLOVEANU
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Documents to download

French
IMEP-LAHC
Grenoble site
Grenoble INP - Minatec : 3, Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1

Chambéry site
Université de Savoie - F73376 Le Bourget du Lac Cedex
 


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