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PhD Defense of PARK Hyungjin

Published on July 4, 2019
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PhD Defense July 10, 2019 | Access map
Defense of the DOCTORAL thesis of PARK  Hyungjin, for the University  Grenoble Alpes , speciality  "NANO ELECTRONICS & NANO TECHNOLOGIES", entitled:
 
Amphi M001/ PHELMA
3 Parvis Louis Néel
38016, Grenoble

« Innovative devices in FD-SOI technology»

PARK Hyungjin

PARK Hyungjin

Wednesday, July 10, 2019  at 14:00
Abstract:
The main purpose of this PhD work is to investigate the fundamentals of floating body effects (FBEs) in recent generations of ultrathin FDSOI devices. Several FBEs, (i) kink effect, (ii) gate-induced FBE, (iii) parasitic bipolar transistor, (iv) sharp switching, (v) current hysteresis, and (vi) transient and history effect (MSD), are scrutinized in terms of interaction between holes and electrons in ultrathin transistor body. The key point is that in an n-channel SOI MOSFET the FBEs are originated from the interplay of the excess holes which are either being stored or eliminated. For better understanding of FBEs, the body potential Vb has measured directly in H-gate body contact n-MOSFETs. The dynamic Vb variation has also been monitored successfully thanks to lateral P+ body contacts extended into the undoped-silicon film underneath the front-gate.

Jury members:
  • CARLOS SAMPEDRO - Reviewer
  • BOGDAN CRETU - Reviewer
  • OLIVIER BONNAUD - Examiner
  • GERARD GHIBAUDO - Examiner

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Partenaires

Thesis prepared  at the laboratory : UMR 5130 - Institut de Microélectronique, Electromagnétisme et Photonique -Laboratoire d'hyperfréquences et de caractérisation ,supervised by Jean-Pierre COLINGE, supervisor and Sorin CRISTOLOVEANU Cosupervisor.

Date of update August 22, 2019

French
CROMA
Grenoble site
Grenoble INP - Minatec : 3, Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1

Chambery site
Université Savoie Mont Blanc - Rue Lac de la Thuile, Bat. 21 - 73370 Le Bourget du Lac
 
 
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