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Microelectronics, electromagnetism, photonics , microwave

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PhD of M. Cheikh DIOUF

Published on October 22, 2013
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PhD Defense October 31, 2013
Defense of a doctoral thesis Cheikh DIOUF  for the University of Grenoble, speciality Nanoelectronics and NanoTechnlologies (NENT) intitled:
Amphitheater  M001 Phelma/ MINATEC
3 rue Parvis Louis Néel - GRENOBLE

Electrical characterization of deca-nanometric MOS transistor with innovative architecture

Mr Cheikh DIOUF

Mr Cheikh DIOUF

Thursday  31st October  2013 at  10:30

Abstract:
The MOS gate length is continuously downscaling because of the need of higher performance and cost-effectiveness. In addition to the fabrication process, the device architecture is being more and more complex and parameters extraction need to be adapted.
          First in this thesis, the effects of high pressure final anneal with hydrogen (HPH2) or deuterium (HPD2) on MOSFET properties is investigated. The transport performances and reliability degradation comparison allow to consider HPD2 as a good compromise. The effect of a silicon-germanium (SiGe) channel is also studied. It is demonstrated that SiGe channel decreases defects located in the high- gate stack. The presence of these defects is confirmed by the study of the negative effects of a high- as a gate oxide.
        Secondly, the Y function method is extended to the saturation regime to reliably extract saturation velocity, obtained in the same conditions as ION current. The problematic due to inversion charge estimation in short devices is solved using high frequency measurements with a two ports structure. Then, effective mobility, average velocity and limiting velocity are obtained in ultra-scaled devices.
 
Key words:
 electrical characterization, advanced MOS, high pressure final anneal, silicon-germanium channel, high-, inversion charge, mobility, velocity.



 


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Partenaires

Thesis  prepared in the  laboratory IMEP-LAHC (Grenoble) supervised by  M. Gérard GHIBAUDO

Date of update October 28, 2013

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M. Gérard GHIBAUDO
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