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Seminar of Monday, October 28, 2013

Published on October 14, 2013
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Seminar October 28, 2013
Open to researchers from other laboratories
 Room  Belledonne, Bat BCAI - IMEP-LAHC/MINATEC,
                from 10:30 to 11:30
 3 rue parvis Louis Neel - 38109 Grenoble Cedex

“Recent progress of gate dielectric films on Si, Ge and graphene”

Professor Akira TORIUMI

Professor Akira TORIUMI

Abstract:
We are studying gate dielectrics on Si, Ge and graphene, because a key challenge in
FETs is always on gate dielectrics and its interfaces. In my talk I will pick up a couple of interesting topics we have recently studied. The scavenging process of the interfacial SiO2 layer in high-k/SiO2/Si gate stacks, high-pressure oxidation of Ge for high mobility Ge n-MOSFETs, and dual gated operation of bi-layer graphene FETs, will be highlighted. These topics are quite interesting (though still challenging) in terms of controlling the interface properties of dielectric films with channel materials.


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Partenaires

Akira Toriumi is a professor of Materials Engineering at The University of
Tokyo, Japan. He received the B.S. degree in physics, the M.S. and Ph.D. degrees in applied physics from the University of Tokyo. He joined the Research and Development Center of Toshiba Corporation and then moved to the University of Tokyo in 2000. His research interests include materials science and engineering of high-k dielectrics for both silicon and germanium FETs and also of oxide-based and carbon-based devices. He is now a vice president of the Japan Society of Applied Physics and a chair of IEEE-EDS Japan Chapter.

Akira Toriumi can be reached by e-mail at toriumi@material.t.u-tokyo.ac.jp

Date of update October 17, 2013

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