Aller au menu Aller au contenu
Microelectronics, electromagnetism, photonics , microwave

> Events > Seminars

Special Séminar, October 14, 2011

Published on October 13, 2011
A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail Partagez cet article Facebook Twitter Linked In Google+ Viadeo
Seminar October 14, 2011 | Access map
Friday , October 14, 2011 at 11:00

Room M253 - 2nd floor , Bat PHELMA /MINATEC,
 3 rue parvis Louis Neel - 38109 Grenoble Cedex

"RTS in Submicron MOSFETs: Lateral Field Effect and Active Trap Position" Professor J. Sikula Czech Noise Research Laboratory, Brno University of Technology, Technicka 8, 616 00 Brno, Czech Republic, (sikula@feec.vutbr.cz )

Abstract:
Experiments were carried out for n-channel devices, processed in a 0.3 m spacerless CMOS technology. The investigated devices have a gate oxide thickness of 6 nm and the effective interface area is AG = 1.5 m2. The RTS measurements were performed for constant gate voltage, where the drain current was changed by varying the drain voltage. The capture time constant increases with increasing drain current. The model explaining the experimentally observed capture time constant dependence on the lateral electric field and the trap position is given. From the dependence of the capture time constant c on the drain current we can calculate x-coordinate of the trap position. Electron concentration in the channel decreases linearly from the source to the drain contact. Diffusion current component is independent on the x-coordinate and it is equal to the drift current component for the low electric field. Lateral component of the electric field intensity is inhomogeneous in the channel and it has a minimum value near the source contact and increases with the distance from the source to the drain. It reaches maximum value near the drain electrode.
 
Prof. RNDr. Sikula Josef, DScJosef Sikula received his M.Sc. degree in Electronics from the Technical University of Prague in 1957, and his M.Sc. degree in Physics from Komensky University, Bratislava in 1960. He received his Ph.D. degree in Semiconductor Physics in 1965 from St Petersburg University Russian and DSc in Applied Physics from Czech Technical University Prague in 1980. He is from 1980 Professor of Applied Physics. Prof. Sikula is a member and past president of the International Microelectronic and Packaging Society Czech and Slovak Chapter and member of ICNF International Advisory Committee. He has published more then 150 papers on various aspects on noise spectroscopy, non-destructive testing, and defect engineering. Currently, Prof. Sikula is a Professor of Applied Physics at Brno University of Technology, Czech Republic.


A+Augmenter la taille du texteA-Réduire la taille du texteImprimer le documentEnvoyer cette page par mail Partagez cet article Facebook Twitter Linked In Google+ Viadeo

Date of update October 13, 2011

Contact

GHIBAUDO Gérard
Envoyer un mail

Documents to download

French
IMEP-LAHC
Grenoble site
Grenoble INP - Minatec : 3, Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1

Chambéry site
Université de Savoie - F73376 Le Bourget du Lac Cedex
 


  CNRS  http://www.cnrs.fr      Site Grenoble-INP http://www.grenoble-inp.fr       Université Grenoble Alpes (UGA)      Université Savoie Mont Blanc
Univ. Grenoble Alpes