Context: Nanonets2Sense is an H2020 Research and Innovation Action which is developing integrated sensing devices for health and well-being applications, with the objective of providing a low-cost, highly sensitive and robust solution for Point-of-Care applications. This is a field of intense research, with strong innovation potential and real opportunities for future industrial development. The devices under study are taking advantage of the sensitivity of nanowires to changes in their surface charge by means of the well-known field-effect. The originality of the project lies in the fact that we are using nanowire based structures called nanonets which can be stacked above a CMOS readout circuit using a “System-on-chip” 3D integration scheme. The device is meant to detect DNA sequences by prior functionalization of the nanonet surface by proper DNA probes, complementary to the target sequence. The aim of this post-doc is to optimize the sensing device structure and the functionalization process for optimum sensitivity. This will be conducted using pseudo MOSFET measurements made on SOI structures in order to be able to screen numerous functionalization schemes before transfer to nanonet-based structures.
The Post Doc candidate should have a PhD in electrical characterization and modelling of semiconductor devices. The post doc’s work will require competences in device electrical characterization at wafer level as well as use of elementary chemical processes for device bio functionalization. Fluent oral and written communication skills in English are required. French speaking skills are welcome. Net salary: 1920€/month. Contract duration: one year renewable once.
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