Integrated devices

Our research evolves in a context of higher and higher frequencies and data rates, ultra-low-power devices and increasing functional densification.
They face the problem of the reconfigurability of RF electronic functions.

1- High frequency measurement methods:

Calibration and de-embedding techniques for integrated device characterization
Wideband characterization techniques (DC to 110 GHz) of materials
In-situ techniques for characterization of very thin films (nm) to bulk (mm) materials

2- Characterization of materials for integrated devices, sensors, printed electronics devices and MEMS

Characterization of dielectric materials, from ultra low-k to very high-k dielectrics, porous oxides as SiOCH, oxides as HfO2, ZrO2, TiTaO and perovskite dielectrics...
Characterization of ferroelectric and piezoelectric materials as AlN, KTN, BST and PZT...
Characterization of semiconductor and conductor materials
Characterization of printed electronics materials (inks, papers)

3- Development, design and characterization of new integrated passive devices and MEMS

3D RF MIM capacitors, new high density 3D capacitors (TSC, Nanowires capacitors)
High performance and tunable integrated capacitors
High speed Interconnections for sub-45 nm CMOS nodes
MEMS and sensors

Date of update October 18, 2019

Grenoble site
Grenoble INP - Minatec : 3, Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1

Chambéry site
Université Savoie Mont Blanc - F73376 Le Bourget du Lac Cedex