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Microelectronics, electromagnetism, photonics , microwave

> Research > RFM > HF measurement techniques, materials characterization, integrated passive devices and 3D integration

HF measurements techniques,materials characterization, integrated passive devices & 3D integration

Research activities are performed according to four complementary topics, from materials and measurement techniques to elementary devices and their applications.

  • 1- High frequency measurement methods:

    • Calibration and de-embedding techniques for integrated device characterization
    •  Wideband characterization techniques (DC to 110 GHz) of materials
    •  In-situ techniques for characterization of very thin films (nm) to bulk (mm) materials
  • 2- Characterization of materials for integrated devices, sensors, printed electronics devices and MEMS :

    • Characterization of dielectric materials, from ultra low-k to very high-k dielectrics, porous oxides as SiOCH, oxides as HfO2, ZrO2, TiTaO and perovskite dielectrics...
    • Characterization of ferroelectric and piezoelectric materials as AlN, KTN, BST and PZT...
    • Characterization of semiconductor and conductor materials
    • Characterization of printed electronics materials (inks, papers)
  • 3- Development, design and characterization of new integrated passive devices and MEMS

    • 3D RF MIM capacitors, new high density 3D capacitors (TSC, Nanowires capacitors)
    •   High performance and tunable integrated capacitors
    •  High speed Interconnections for sub-45 nm CMOS nodes
    •  MEMS and sensors
  • 4- 3D Integrated Circuits (3D-IC) and 3D packaging

    • Modelling and characterisation of TSV, Pillars and RDL interconnections
    • Architectures of 3D passives in 3D-IC stacks
    • 3D interposer technologies
    •  High speed interconnection channels for 3D integration (Wide I/O, HDMI...)

Date of update February 22, 2013

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