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Centre for Radiofrequencies, Optic and Micro-nanoelectronics in the Alps

> Platforms > Physical and electrical characterization > Measurements of the transport properties

Measurements of the transport properties

At room temperature, we're able to characterize on-wafer directly thanks to:
 
  • A manual probe test bench for resistivity and Hall effect measurement
     
Concerning the low temperature measurements, two possibilities:
  • A cryostat for Hall effect measurement on DIL packaged samples (15K->400K and Bmax=0.85 T).  
     
  • A test bench for Hall effect measurement, plus the possibility to get magnetic-resistance measurements thanks to a high applied magnetic field (up to 9T) on PLCC (24 pin) packaged devices. (Temperature range: from 2K up to 400K).
Hall effect measurement, Hall effect measurement

Date of update May 17, 2019

French
CROMA
Grenoble site
Grenoble INP - Minatec : 3, Parvis Louis Néel - CS 50257 - 38016 Grenoble Cedex 1

Chambery site
Université Savoie Mont Blanc - Rue Lac de la Thuile, Bat. 21 - 73370 Le Bourget du Lac
 
 
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