PhD defense of Sotirios ATHANASIOU
Publié le January 16, 2017
Date de l'évènement : January 17, 2017
Defense of a doctoral thesis of Sotirios ATHANASIOU, for the University of Grenoble Alpes , speciality "NANO ELECTRONICS and NANO TECHNOLOGIES ", entitled:
«Conception, fabrication and characterization of innovative FD-SOI devices for advanced protection against electrostatic discharge damage»
Tuesday, January 17th, 2017 at 10:30
The thesis main objective is the design of protection against electrostatic discharge (ESD), for deep submicron (DSM) state-of-the-art fully depleted silicon-on-insulator technology (FDSOI ). This requires the ESD characterization of existing elementary
devices and design of new FDSOI devices.
The detailed characterization of the physical mechanisms and device performance will be conducted at IMEP which has adequate facilities and scientific competence in this
field. It will then be necessary to make choices for ESD protection strategies based on circuit applications by STMicroelectronics. An ambitious approach aims to develop novel SOI components used for ESD protection. This part of the work will be performed under the responsibility of IMEP as it has has recently invented and published several types of revolutionary transistors Z 2-FET, TFET and BET-FET.
It will be necessary to understand the fabrication process technology of STMicroelectronics. In this framework, 3D simulation of the technology will be performed on TCAD software for 28nm FDSOI and future technologies. Firstly it will embrace all the possibilities inherent in the creation components to Boston in the specific technology and then this preliminary study will provide structures for ESD simulation configurations.
Physical simulation, with TCAD tools of the semiconductor will be used to study more precisely the behavior of the elementary components of ESD protection. Collaboration with the IMEP is essential for the identification and analysis of the physical mechanisms governing device operation.
In particular, the main objective is to integrate ESD protection and evaluate its
effectiveness and design. It will also be possible to perform mixed-mode simulation to better analyse the effects of the 3D structure (corner effects, depolarization of substrate) and evaluate the influence of trigger circuits associated with this protection.
Optimizing the implementation of ESD protection will then be possible . Having studied from a theoretical point of view and numerical simulation, ESD protection cells and trigger circuits associated with the ESD protection strategy, qualification on silicon will be applied. This will be done by a test vehicle in the chosen SOI technology, and electrical characterization of the structures and protection networks
will follow. Finally, the ESD performance will be analyzed to provide optimization of the design and choice of ESD protection strategy based on targeted applications.
FD-SOI, Advanced CMOS, Electrical characterization, TCAD, ESD, Fabrication
Members of jury :
M. Alexander ZASLAVSKY: Professor, Brown University, US, Rapporteur
M. Bruno ALLARD: Professor, Université de Lyon, FR, Rapporteur
M. Jurriaan SCHMITZ: Professor, University of Twente, NL, Member
Mme. Maud VINET: Advanced CMOS manager, CEA-LETI, FR, Guest
M. Gerard GHIBAUDO: Director of Research CNRS, CNRS, FR, President
M. Philippe GALY: STMicroelectronics, FR, Member
M. Sorin CRISTOLOVEANU: Director of Research emeritus CNRS, CNRS, FR, Member
Thesis prepared in the laboratory : UMR 5130 - IMEP-LAHC & STMicroelectronics Crolles, supervised by M. Sorin CRISTOLOVEANU and M.Philippe GALY .
IMEP-LAHC - UMR 5130
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