PhD defense of Jihoon CHOI

 This thesis focuses on the development of new methodologies and design strategies for the fabrication of SiC nanostructures and SiC nanodevices. Single crsytalline SiC nanostructures with controlled doping have been elaborated based on the top-down approach. The obtained SiC nanopillars exhibit high anisotropy features (6.4) with a large etch depth (>7 m). The etching behavior of SiC nanopillars depending on the different polytypes and crystallographic orientations have also been investigated. The morphologies of SiC nanopillars show different shapes (triangle, rhumbus and hexagon) according to the SiC polytypes and crystalline orientations. The electrical properties of the nanowire Field Effect Transistors based on these SiC nanostructures obtained by top-down approach show higher carrier mobility than the best values reported in the literature.