Defense of a doctoral thesis of Mr Benoît SKLENARDfor the University of Grenoble, speciality Nanoelectronics and NanoTechnlologies (NEET) entitled:
Amphitheater M001 PHELMA-MINATEC 3 rue Parvis louis Néel-38016 GRENOBLE
"Physical modeling of junction processing in FDSOI devices for 20 nm node and below"
Thursday 10th April 2014 at 14:00
Complementary metal oxide semiconductor (CMOS) device scaling involves many technological challenges in terms of junction formation, in particular for 3D sequential integration and Fully-depleted Silicon on Insulator (FDSOI) architectures. In this thesis, the physical phenomena involved during the junction formation at a low processing temperature (i.e. ≤ 600°C) have been studied. Such a process relies on Solid Phase Epitaxial Regrowth (SPER) of an amorphous region to activate the dopants. A new model based on Kinetic Monte Carlo (KMC) method has been developed in order to simulate SPER at the atomistic scale. This model has been used to understand the regrowth anisotropy and provide an explanation for the formation of defects as well as to get insight into the influence of a non-hydrostatic stress and the presence of electrically active dopants on the regrowth kinetics.
Members of jury : - Dr. Alain Claverie, DR CNRS, CEMES Toulouse (President), - Prof. Nick Cowern, Newcastle University, UK (reporter), - Dr. Evelyne Lampin, CR CNRS et HDR, IEMN, Lille (reporter), - Dr. Ignacio Martin-Bragado, IMDEA Materials, Madrid, Espagne (co-supervisor) - Dr. Perrine Batude, Ing. CEA‒LETI, Grenoble (co-supervisor) - M. Clément Tavernier, STMictoelectronics, Grenoble (co-supervisor, guest of jury ) - Mme Pierette Rivallin, CEA‒LETI (guest of jury), - Dr. Sorin Cristoloveanu, IMEP‒LAHC (supervisor).
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Thesis preparedin the laboratory IMEP-LAHC and CEA Leti supervised by M. Sorin Cristoloveanu and MM Perrine Batude, Pierrette Rivallin, Ignacio Martin-Bragado and Clément Tavernier .