"The design and realization of millimiter wave circuits in advanced BiCMOS 55nm technology"
Monday, September 28, 2015 at 10:30
In the past few years, the feasibility of high performance millimeter-wave (mmWave) fully-integrated transceivers has been widely demonstrated in both CMOS and BiCMOS silicon technologies. Nowadays, automatic level control (ALC) solutions and in-situ testing (BIT: Built in Testing) and characterization of mmWave components, constitute the major research interest in mmWave domain. This work focus on the development of the main building blocks (power detectors and baluns) that meet the requirement of the today’s mmWave ALC and BIT applications. The developed prototypes take advantage of the high performances transistors offered by the BiCMOS 55 nm technology, from STMicroelectronics, as well as the high performances of the slow-wave based passive components developed by the IMEP-LAHC laboratory. Several prototypes were developed as a proof of concept for the designated applications. This work helps future generation millimeter-wave systems to have faster development and better robustness. Key words: Balun, CMOS and BiCMOS, power amplifier, power detector, slow wave guideline, millimeter-wave band.
Members of the jury : Jean-Michel FOURNIER : Supervisor Estelle LAUGA-LARROZE :Co-supervisor Eric TOURNIER: Rapporteur Jean GAUBERT: Rapporteur Raymond QUERE: Rewiever Philippe FERRARI: Rewiever
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Thesis preparedin the laboratory IMEP-LaHC supervised by Jean-Michel FOURNIER , Supervisor, and Estelle LAUGA-LARROZE, Co-supervisor.