Defense of a doctoral thesis of VILLALON Anthony for the University of Grenoble, speciality Nanoelectronics and NanoTechnlologies (NEET) entitled :
Amphithéatre P015 - Phelma Polygone 23 rue des martyrs Grenoble
" Steep slope nano-transistors for Ultra Low Power applications "
Wednesda, December 10, 2014 at 14:00
Band to band tunneling field effect transistor (TFET) is a PIN-gated architecture able to reach sub 60mV/dec subthreshold slopes at room temperature, which is an advantage over MOSFET in low power applications. The objective of this thesis is to study and characterize experimental TFETs fabricated using MOSFET-compatible FDSOI technology. The first generation of devices is realized on planar technology, and studies the impact of source/channel heterojunction, channel thickness and annealing temperature on device performances, while the second generation possesses horizontal nanowire architecture, with research focusing on the impact of the wire geometry. Through measurements we were able to prove the band to band tunneling injection, while the reported performances were compared with literature and with MOSFET. Furthermore, advanced characterizations led to a better understanding of the output characteristics while low temperature measurements gave precious information on the remaining defects in the TFETs, as well as on which process steps to improve in the future.
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Thesis prepared in the laboratoiry : UMR 5130 - IMEP-LaHC (Institut de Microélectronique, Electromagnétisme, Photonique – Laboratoire Hyperfréquences et Caractérisation), supervised by Sorin CRISTOLOVEANU